RESULTS OF VACUUM CLEANING TECHNIQUES ON THE PERFORMANCE OF LIF FIELD-THRESHOLD ION SOURCES ON EXTRACTION APPLIED-B ION DIODES AT 1-10 TW

Uncontrolled plasma formation on electrode surfaces limits performance in a wide variety of pulsed power devices such as electron and ion di odes, transmission lines, radio frequency (RF) cavities, and microwave devices. Surface and bulk contaminants on the electrodes in vacuum do minate the composition of these plasmas, formed through processes such as stimulated and thermal desorption followed by ionization. We are a pplying RF discharge cleaning, anode heating, cathode cooling, and sub strate surface coatings to the control of the effects of these plasmas in the particular case of applied-B ion diodes on the SABRE (1 TW) an d PBFA-X (30 TW) accelerators. Evidence shows that our LiF ion source provides a 200-700 A/cm(2) lithium beam for 10-20 ns which is then rep laced by a contaminant beam of protons and carbon. Other ion sources s how similar behavior, Our electrode surface and substrate cleaning tec hniques reduce beam contamination, anode and cathode plasma formation, delay impedance collapse, and increase Lithium energy, power, and pro duction efficiency. Theoretical and simulation models of electron-stim ulated and thermal-contaminant desorption leading to anode plasma form ation show agreement with many features from experiment, Decrease of t he diode electron loss by changing the shape and magnitude of the insu lating magnetic field profiles increases the lithium output and change s the diode response to cleaning. We also show that the LiF films are permeable, allowing substrate contaminants to affect diode behavior, S ubstrate coatings of Ta and Au underneath the LiF film allow some meas ure of control of substrate contaminants, and provide direct evidence for thermal desorption. We have increased lithium current density by a factor of four and lithium energy by a factor of five through a combi nation of in situ surface and substrate cleaning, substrate coatings, and field profile modifications.