Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlNquantum wells grown by molecular beam epitaxy

Authors
Taliercio, T Gallart, M Lefebvre, P Morel, A Gil, B Allegre, J Grandjean, N Massies, J Grzegory, I Porowski, S
Citation
T. Taliercio et al., Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlNquantum wells grown by molecular beam epitaxy, SOL ST COMM, 117(7), 2001, pp. 445-448
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
117
Issue
7
Year of publication
2001
Pages
445 - 448
Database
ISI
SICI code
0038-1098(2001)117:7<445:CATSIH>2.0.ZU;2-5
Abstract
We have grown GaN films and GaN-AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet las ers based on nitrides. (C) 2001 Published by Elsevier Science Ltd.