Activated strain relief of Ge/Si(100) islands

Stress concentration at the boundary of Ge/Si(100) islands drives strain re lief mechanisms activated at higher growth temperature, T. Si interdiffusio n for T greater than or equal to 550 degreesC forms a reduced misfit alloy allowing specific cluster morphologies to exist at sizes greater than those for pure Ge islands. This interdiffusion also affects the pathway for isla nd shape changes. Trenches formed at the island base result from diffusion of the most highly strained material to regions of lower strain and precede dislocation formation for T greater than or equal to 600 degreesC.