Dynamic LEEM observation of Cu nanostructure formation processes on Si(111) with hydrogen

Dynamic observation of the growth of Cu on dean and hydrogen-terminated Si( 111) surfaces was carried out by using low energy electron microscopy (LEEM ). On the clean surface, the two-dimensional "5 X 5" structure is formed, a nd the formation process of the "5 x 5" structure depends on the substrate temperature. Triangular islands are grown on the "5 x 5" structure after fu rther deposition of Cu. On the other hand, the nanoscale islands are direct ly formed on the hydrogen-terminated surface below about 400 degreesC. Abov e about 400 degreesC, however, the Cu-induced desorption of hydrogen takes place, and the growth process becomes similar to that on the clean surface.