Surface morphology of GaN surfaces during molecular beam epitaxy

Authors
Feenstra, RM Chen, HJ Ramachandran, V Lee, CD Smith, AR Northrup, JE Zywietz, T Neugebauer, J Greve, DW
Citation
Rm. Feenstra et al., Surface morphology of GaN surfaces during molecular beam epitaxy, SURF REV L, 7(5-6), 2000, pp. 601-606
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SURFACE REVIEW AND LETTERS
ISSN journal
0218625X → ACNP
Volume
7
Issue
5-6
Year of publication
2000
Pages
601 - 606
Database
ISI
SICI code
0218-625X(200010/12)7:5-6<601:SMOGSD>2.0.ZU;2-2
Abstract
The reconstruction and surface morphology of gallium nitride (0001) and (00 01) surfaces are studied using scanning probe microscopy and reflection hig h energy electron diffraction. Results for bare GaN surfaces are summarized , and changes in the surface structure and morphology due to codeposition o f indium or magnesium during growth are discussed.