Ion scattering and recoiling spectroscopy for real time monitoring of surface processes in a gas phase atmosphere

Authors
Fujino, T Katayama, M Yamazaki, Y Inoue, S Ryu, JT Oura, K
Citation
T. Fujino et al., Ion scattering and recoiling spectroscopy for real time monitoring of surface processes in a gas phase atmosphere, SURF REV L, 7(5-6), 2000, pp. 657-659
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SURFACE REVIEW AND LETTERS
ISSN journal
0218625X → ACNP
Volume
7
Issue
5-6
Year of publication
2000
Pages
657 - 659
Database
ISI
SICI code
0218-625X(200010/12)7:5-6<657:ISARSF>2.0.ZU;2-M
Abstract
Various surface processes, such as thin film growth or etching, are usually performed by introducing various gases into a vacuum chamber. In order to monitor such surface processes in situ, we have developed an ion scattering and recoiling spectroscopy apparatus equipped with a differential pumping system. The system was applied for real time monitoring of hydrogen-mediate d growth of Ge films on Si substrates under a hydrogen gas pressure of 10(- 4) Torr.