Secondary electron emission data of cesiated oxygen free high conductivitycopper(II)

Citation
Hj. Hopman et al., Secondary electron emission data of cesiated oxygen free high conductivitycopper(II), APPL SURF S, 171(3-4), 2001, pp. 197-206
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
171
Issue
3-4
Year of publication
2001
Pages
197 - 206
Database
ISI
SICI code
0169-4332(20010215)171:3-4<197:SEEDOC>2.0.ZU;2-E
Abstract
Depositing approximate to0.5 monolayer of Cs on a properly prepared disk of oxygen free high conductivity (OFHC) copper. the workfunction decreases by 3.17 +/- 0.15 eV. As a result, the coefficient of secondary electron emiss ion under electron bombardment increases and the width of the secondary ele ctron energy distribution at half maximum decreases from 6.7 to 2.8 eV. For an impact energy of the: primary electrons E-p < 20 eV, it is found that t he production of true secondary electrons increases by a factor 2.2. The pr obability of elastic scattering of very low energy electrons increases from 0.1 on clean copper to 0.4 on cesiated copper. (C) 2001 Elsevier Science B .V. All rights reserved.