Depositing approximate to0.5 monolayer of Cs on a properly prepared disk of
oxygen free high conductivity (OFHC) copper. the workfunction decreases by
3.17 +/- 0.15 eV. As a result, the coefficient of secondary electron emiss
ion under electron bombardment increases and the width of the secondary ele
ctron energy distribution at half maximum decreases from 6.7 to 2.8 eV. For
an impact energy of the: primary electrons E-p < 20 eV, it is found that t
he production of true secondary electrons increases by a factor 2.2. The pr
obability of elastic scattering of very low energy electrons increases from
0.1 on clean copper to 0.4 on cesiated copper. (C) 2001 Elsevier Science B
.V. All rights reserved.