Quantum size effect in low energy electron diffraction of thin films

Authors
Altman, MS Chung, WF He, ZQ Poon, HC Tong, SY
Citation
Ms. Altman et al., Quantum size effect in low energy electron diffraction of thin films, APPL SURF S, 169, 2001, pp. 82-87
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
169
Year of publication
2001
Pages
82 - 87
Database
ISI
SICI code
0169-4332(20010115)169:<82:QSEILE>2.0.ZU;2-0
Abstract
Low energy electron microscopy (LEEM) is used to study the quantum size eff ect (QSE) in electron reflectivity from thin films. Strong QSE interference peaks are seen below 20 eV for Cu and Ag films on the W(1 1 0) surface and Sb films on the Mo(0 0 1) surface. Simple inspection of QSE interference p eaks reveals that all three metals grow atomic layer-by-atomic layer. Layer -specific I(V) spectra obtained with LEEM permit structural analysis by ful l dynamical multiple scattering LEED calculations for a layer-by-layer view of thin film structure. (C) 2001 Elsevier Science B.V. All rights reserved .