STM study of structural changes on Si(100)2 x 1-Sb surface induced by atomic hydrogen

Using scanning tunneling microscopy (STM) and low energy electron diffracti on (LEED), we have studied the structural changes of the Si(100)2 x 1-Sb su rface caused by hydrogen adsorption at both room temperature (RT) and 300 d egreesC. We have found that the ordering of a 2 x 1-Sb surface is more stab le against atomic hydrogen exposure at 300 degreesC than at RT. and that so me Sb atoms desorb during atomic hydrogen exposure at 300 degreesC. However , upon hydrogen exposure at both temperatures, we have observed neither thr ee-dimensional islands nor the hydrogen terminated Si substrate which were reported for hydrogen interaction with the other metal/Si systems. On the 2 x 1-Sb surface exposed to atomic hydrogen of 1000 L at RT followed by 550 degreesC annealing, long bright lines similar to those reported for the Bi/ Si(100) system have also been found. (C) 2001 Elsevier Science B.V. All rig hts reserved.