Growth and characterization of CoSi2 films on Si (100) substrates

In the present work, a special solid phase epitaxy method has been adapted for the preparation of CoSi2 film. This method includes an epitaxial growth of Co films on Si (1 0 0) substrate, and in situ annealing of the Co/Si fi lms in vacuum. It has been found that at the substrate temperature of 360 d egreesC, fee cobalt film grows epitaxially on the Si (100) surface. The cry stallographic orientation relations between fee Co film and Si substrate de termined from the electron diffraction result are: (0 0 1) Co//(0 0 1) Si, [1 0 0] Co//[1 1 0]Si. Upon annealing at temperatures range from 500 to 600 degreesC, Co film reacts with Si substrate and transforms into CoSi2. The CoSi2 films prepared by this way are characterized by XTEM, XPS and AFM. (C ) 2001 Elsevier Science B.V. All rights reserved.