Electrical and optical properties of InN films prepared by reactive sputtering

Indium nitride thin films were prepared by the reactive magnetron sputterin g method. The indium target was sputtered by pure nitrogen gas. The effects of sputtering pressure (P) on the structural, optical and electrical prope rties of the films were investigated. With increasing P, the deposition rat e decreased, and the film structure changed from crystalline phase with a h exagonal wurtzite structure to amorphous one. The energy bandgaps in crysta lline films are around 1.9 eV, whereas optical bandgaps in amorphous films are larger than this value. The electrical conductivity, Hall mobility and carrier concentration of the films depend on P and they take minima at P si milar to 4 Pa (C) 2001 Elsevier Science B.V. All rights reserved.