Thin film properties by facing targets sputtering system

Citation
Kh. Kim et al., Thin film properties by facing targets sputtering system, APPL SURF S, 169, 2001, pp. 410-414
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
169
Year of publication
2001
Pages
410 - 414
Database
ISI
SICI code
0169-4332(20010115)169:<410:TFPBFT>2.0.ZU;2-X
Abstract
In this study, film thickness distribution and c-axis crystalline orientati on of deposited thin films were studied after preparing Co-Cr thin films, a promising ultra-high density perpendicular magnetic recording media, with a facing targets sputtering (FTS) apparatus. Electrical discharge character istics needed for the optimum operation of sputter device was also studied in order to prepare thin films of superior c-axis crystalline orientation w ith FTS method (apparatus) in which thin film of fine quality can be formed because temperature increase of substrate due to the bombardment of high-e nergy particles can be restrained. As a result of the study, it is confirmed that the FTS method can give stab le working under broad magnetic field and range of gas pressure and stable electrical discharge under low Ar gas pressure, Film thickness of prepared thin film shows fairy regular distribution and could obtain good thin films whose dispersion angle of c-axis crystalline orientation is about 3.5 degr ees. (C) 2001 Elsevier Science B.V. All rights reserved.