Influence of UV light irradiation on film thickness distribution of tin oxide films by photochemical vapour deposition

Citation
S. Tamura et al., Influence of UV light irradiation on film thickness distribution of tin oxide films by photochemical vapour deposition, APPL SURF S, 169, 2001, pp. 425-427
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
169
Year of publication
2001
Pages
425 - 427
Database
ISI
SICI code
0169-4332(20010115)169:<425:IOULIO>2.0.ZU;2-N
Abstract
Tin oxide (non-doped) films have been prepared by a photochemical vapour de position (photo-CVD) from Tetramethyltin (TMT) (Sn(CH3)(4)) and O-2 (contai ning O-3) A low-pressure mercury lamp was used as the light source. The eff ect of the UV light irradiation on the film thickness distribution along 5 cm x 5 cm area was examined. By piling Teflon films on the surface of the s uprasil window, the Light intensity of 184.9 nm UV wavelength of the low-pr essure mercury lamp was controlled, while that of 253.7 nm wavelength throu gh the Teflon hardly changed. As a result, the uniformity of the film thick ness distribution was improved as the light intensity (184.9 nn) increased. The UV 184.9 nm Light irradiation may have improved the uniformity of the reactive species distribution in the vapour phase, which may result in the formation of the uniform thickness distribution. (C) 2001 Elsevier Science B.V. All rights reserved.