Y. Igasaki et H. Kanma, Argon gas pressure dependence of the properties of transparent conducting ZnO : Al films deposited on glass substrates, APPL SURF S, 169, 2001, pp. 508-511
Aluminium doped zinc oxide (ZnO:AI) films were deposited on amorphous subst
rates heated up to 200 degreesC with a radio frequency (rf) power of 100 W
by rf magnetron sputtering from a ZnO target mixed with Al2O3 Of 2 Wt.%. Ar
gon gas pressure during deposition was in the range 0.08-2.7 Pa. As argon g
as pressure was increased, the deposition rate and the grain size were decr
eased and the surface roughness was increased. Furthermore, the carrier con
centration and the Hall mobility were decreased and thus the electrical res
istivity was increased. However, the optical transmittance of about 90% was
maintained over the argon pressure range. The resistivity of the film depo
sited at argon gas pressure of 0.13 Pa was about 2.5 x 10(-4)Ohm cm, a valu
e comparable to that for indium tin oxide film presently used as a transpar
ent electrode. (C) 2001 Elsevier Science B.V. All rights reserved.