Development of PZT sputtering method for mass-production

Ferroelectric thin films have been widely expected for nonvolatile ferroele ctric random access memory (FeRAM) application. Production process of depos iting Pb(Zr,Ti)O-3 (PZT) thin films has been developed by using RF-magnetro n sputtering method. It is very important to study stability of Pb content in the PZT films, uni formity of film thickness on large (8 in.) substrate and maintenance period icity of the sputtering chamber (coping with particles) for the production. The stability for 1000 wafer deposition and the thickness uniformity of 5% were realized. Improving the sputtering equipment, the shield life until p article-break-out became long. (C) 2001 Elsevier Science B.V. All rights re served.