In surface nitriding by plasma, a major concern is to enhance the density o
f reactive species of nitrogen. One method is to mix a gas with an ionizati
on potential lower than that of nitrogen. The hydrogen gas mixing was carri
ed out in an electron cyclotron resonance (ECR) nitrogen plasma. Relative d
ensity of molecular ion in the vicinity of a substrate was measured by an o
ptical emission spectroscopy. Under a fixed discharge pressure, the densiti
es of nitrogen molecular ion (N-2(+)) and excited molecular nitrogen (N-2*)
were observed: they have a maximum, when a ratio of hydrogen pressure to n
itrogen pressure was 0.5. Silicon nitriding was also conducted by using the
nitrogen-hydrogen mixed plasma. In the case of maximum densities of reacti
ve species, silicon nitriding was most effective. (C) 2001 Elsevier Science
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