THERMAL-DISSOCIATION OF NH2CHO (ND2CHO) ON SI(100)-2X1

The interaction between NH2CHO (ND2CHO) and Si(100)-2x1 has been inves tigated using HREELS, UPS, XPS, and TDS. At 100 K, formamide molecules randomly adsorb on the surface but become ordered, likely with the O- atom attached to the surface, as the 2 L NH2CHO dosed Si(100) surface is warmed to 200 K. At this temperature, the formation of some Si-H sp ecies is indicated by the appearance of the 256 meV peak due to the Si -H stretching vibration in HREELS. When the sample is annealed at 450 K, more H species are formed, accompanied by the appearance of OH. In addition, a peak at 172(160) meV appears in HREELS, which can be attri buted to the HN=C (DN=C) and/or HNCO (DNCO) species. The latter is mor e clearly evident in the UPS data. At 550 K, the breaking of CH and NH bonds continues and the OH and H dominate the adspecies. Further anne aling the sample at higher temperatures causes the desorption of NH3 ( ND3) and HCN (DCN) species and the formation of the Si-O-Si complex as indicated by the 129 meV peak in HREELS due to the asymmetric stretch ing mode of the Si-O-Si species. Above 800 K, the Si-H stretching mode at 260 meV decreases dramatically because of the desorption of hydrog en, as confirmed by the result of TDS.