Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation

Authors
Ribbat, C Sellin, R Grundmann, M Bimberg, D Sobolev, NA Carmo, MC
Citation
C. Ribbat et al., Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation, ELECTR LETT, 37(3), 2001, pp. 174-175
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
3
Year of publication
2001
Pages
174 - 175
Database
ISI
SICI code
0013-5194(20010201)37:3<174:ERHOQD>2.0.ZU;2-X
Abstract
The influence of high energy proton irradiation on the device properties of InGaAs/GaAs quantum dot and quantum well lasers has been investigated. In the regime of spontaneous emission, quantum dot lasers show a much enhanced radiation hardness compared to quantum well lasers. manifested in a smalle r increase of threshold current density. However, in the lasing regime the device characteristics are similarly influenced. Internal differential quan tum efficiencies are reduced. internal optical losses remain constant.