High breakdown voltage GaNHFET with field plate

A novel high breakdown voltage GaN HFET with a field plate (FP GaN HFET) to form a gamma-shape gate is presented. The use of the field plate significa ntly reduces the field strength under the gate near the drain side. Simulat ion results show that the peak electric field of the device is reduced from 1.2 x 10(6)V/cm to 0.9 x 10(6)V/cm for the particular structure used. A hi gh breakdown voltage (over 110V) is achieved and the average ratio of BVgd over BVgs reaches a value of 2.4, compared to that of only 1.038 for a conv entional GaN HFET.