Pnp InGaAsN-based HBT with graded base doping

Authors
Monier, C Baca, AG Chang, PC Li, NY Hou, HQ Ren, F Pearton, SJ
Citation
C. Monier et al., Pnp InGaAsN-based HBT with graded base doping, ELECTR LETT, 37(3), 2001, pp. 198-199
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
3
Year of publication
2001
Pages
198 - 199
Database
ISI
SICI code
0013-5194(20010201)37:3<198:PIHWGB>2.0.ZU;2-V
Abstract
A grading of the base doping concentration is used to establish an electric field in the base of a Pnp A1GaAs/InGaAsN heterojunction bipolar transisto r (HBT). An improved peak current gain value (beta similar or equal to 60) is observed over a device with uniform base doping, due to better hole tran sport in the base. A cut-off frequency of 15GHz measured from a 3 x 12 mum( 2) non-self aligned HBT demonstrates the practical impact the electric fiel d has on the transit time across the base.