OPTICAL AND ELECTRICAL-PROPERTIES OF THE TERNARY, LAYER-STRUCTURED COMPOUND MGIN2SE4

In this paper we present optical and electrical properties of n-type s ingle crystals of the ternary layer compound semiconductor MgIn2Se4. F rom transmittance and reflectance measurements, the index of refractio n and the absorption coefficient were determined in the spectral regio n from 750 to 2000 nm. From an analysis of this data, an indirect phon on-assisted transition and a direct transition were found to occur at 1.40 and 1.64 eV, respectively. The temperature dependence of the dire ct transition and an average phonon energy of 24.2 meV result from pho toacoustic spectroscopy measurements. Photoconductivity data are also presented, which were analyzed to obtain the temperature dependence of the indirect transition. The electrical characteristics of the sample s have been studied from temperature dependent resistance and Hall mea surements.