N-TYPE NEGATIVE-RESISTANCE IN M NIS2-XSEX/M STRUCTURES/

Authors
CHUDNOVSKII FA PERGAMENT AL STEFANOVICH GB SOMASUNDARAM P HONIG JM
Citation
Fa. Chudnovskii et al., N-TYPE NEGATIVE-RESISTANCE IN M NIS2-XSEX/M STRUCTURES/, Physica status solidi. a, Applied research, 161(2), 1997, pp. 577-580
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
161
Issue
2
Year of publication
1997
Pages
577 - 580
Database
ISI
SICI code
0031-8965(1997)161:2<577:NNIMNS>2.0.ZU;2-O
Abstract
We present measurements of the current-voltage characteristics of meta l/NiS2-xSex/metal structures. Due to the unusual metal-insulator phase transition in NiS2-xSex, in which the low-temperature phase is metall ic-like, whereas above the transition temperature the material is a se miconductor, we observed N-type current-voltage characteristics. The s witching time for NiS2-xSex thin films is estimated to be roughly 10(- 8) s, which is sufficiently short to be of interest for applications.