Some experimental investigations have been carried out on GaAs-based d
evices in connection with the existing two roots model. A new empirica
l relationship has been established which follows the experimental dat
a for different semiconductor devices exactly. This has been explained
in terms of the emission/capture of carriers by midgap traps, impurit
ies etc. involved in the two roots model. It is experimentally establi
shed that appearance (and disappearance) of hysteresis in the I-V char
acteristics could take place in the same device at different temperatu
res. This phenomenon reemphasizes the importance of the model.