THE 2 ROOTS MODEL AND ITS APPLICATIONS IN GAAS-BASED DEVICES

Some experimental investigations have been carried out on GaAs-based d evices in connection with the existing two roots model. A new empirica l relationship has been established which follows the experimental dat a for different semiconductor devices exactly. This has been explained in terms of the emission/capture of carriers by midgap traps, impurit ies etc. involved in the two roots model. It is experimentally establi shed that appearance (and disappearance) of hysteresis in the I-V char acteristics could take place in the same device at different temperatu res. This phenomenon reemphasizes the importance of the model.