INTERBAND COHERENCE IN SEMICONDUCTORS - EXCITONS AND BEYOND

Citation
Jm. Hvam et al., INTERBAND COHERENCE IN SEMICONDUCTORS - EXCITONS AND BEYOND, Journal of luminescence, 72-4, 1997, pp. 25-28
Citations number
18
Categorie Soggetti
Optics
Journal title
ISSN journal
00222313
Volume
72-4
Year of publication
1997
Pages
25 - 28
Database
ISI
SICI code
0022-2313(1997)72-4:<25:ICIS-E>2.0.ZU;2-9
Abstract
Spectrally resolved transient four-wave mixing is studied in GaAs/AlGa As quantum wells for coherent excitation of exciton and continuum stat es. A distinct contribution from the continuum states is observed in t he signal at the exciton resonance. From quantum beat experiments, the biexciton binding energy is determined as a function of well and barr ier widths.