Advances in electron emission channeling measurements in semiconductors

This paper reports on recent advances in the application of electron emissi on channeling to studies of the lattice location of radioactive probe atoms in semiconductors. The introduction of position-sensitive electron detecti on has resulted in an improvement in the experimental efficiency of this me thod by two orders of magnitude. Electron emission channeling now is able t o carry out detailed lattice location studies, and is especially interestin g for cases where conventional ion beam lattice location techniques cannot be applied due to a lack of sensitivity. Characteristic features of electro n emission channeling with position-sensitive detection are discussed and i llustrated by results on the lattice location of Er in Si and GaAs, and on the lattice sites and stability of implanted transition metals in Si.