SEMICONDUCTOR MICROCAVITIES FOR SPONTANEOUS EMISSION CONTROL

Authors
Citation
I. Abram, SEMICONDUCTOR MICROCAVITIES FOR SPONTANEOUS EMISSION CONTROL, Journal of luminescence, 72-4, 1997, pp. 29-33
Citations number
13
Categorie Soggetti
Optics
Journal title
ISSN journal
00222313
Volume
72-4
Year of publication
1997
Pages
29 - 33
Database
ISI
SICI code
0022-2313(1997)72-4:<29:SMFSEC>2.0.ZU;2-X
Abstract
The confinement of the electromagnetic field in cavities with dimensio ns of the order of the wavelength modifies the characteristics of spon taneous emission of a dipole placed in the cavity. Planar semiconducto r microcavities, which confine the field in only one dimension, can be readily fabricated by epitaxial crystal growth techniques. These stru ctures display novel radiative phenomena that are of interest in basic physics and point to the possibility of developing novel optoelectron ic devices.