beta-NMR in II-VI semiconductors

Citation
B. Ittermann et al., beta-NMR in II-VI semiconductors, HYPER INTER, 129(1-4), 2000, pp. 423-441
Citations number
47
Categorie Soggetti
Physics
Journal title
HYPERFINE INTERACTIONS
ISSN journal
03043843 → ACNP
Volume
129
Issue
1-4
Year of publication
2000
Pages
423 - 441
Database
ISI
SICI code
0304-3843(2000)129:1-4<423:BIIS>2.0.ZU;2-1
Abstract
beta -active probe nuclei are implanted in nominally undoped ZnSe crystals. beta -radiation detected nuclear magnetic resonance (beta -NMR) studies ar e described for two different probe nuclei, Li-8 and B-12. This way, the im plantation behavior of two "opposite" dopants, one acceptor (Li) and one do nor (B) can be characterized by the same microscopic technique. Such charac terizations are attempted in terms of the structure of intermediate or fina l lattice sites, defect charge states, or the kinetics of defect reactions and site changes.