ULTRAVIOLET LUMINESCENCE AND ELECTROLUMINESCENCE OF POLYDIHEXYLSILANE

We report the ultraviolet (UV) electro-luminescence (EL) of highly pur ified polysilanes at low temperatures (below 210 K) for the first time . We observed st sharp EL band in highly purified polydihexylsilane (P DHS) thin film at 3.35 eV (370 nm) which is attributed to the radiativ e decay of the B-1(u) exciton state. The decrease of the EL quantum yi eld at high temperature is attributed to the thermally activated fluct uation of the Si backbone configuration. We also report the phosphores cence spectrum of the PDHS thin film observed at 4.2 K.