Empirical modeling of LF gate noise irm GaAs DCFET in impact ionization regime

The evolution of the 1/f gate noise in GaAs DCFET has been analyzed in the impact ionization regime. As the drain bias Vd is raised, a steep increase of the 1/f gate current noise is observed in correlation with the triggerin g of the impact ionization mechanism, a novel and empirical model of the 1/ f low frequency gate current noise Sig measured in the impact ionization re gime is proposed, The following relation fits it with an exponential law: S ig = E exp (-F/Vd)(1/f), which is similar to the well-known dependence of t he impact ionization rate ct on the drain bias.