InAlAs/InGaAs HBTs with simultaneously high values of F-tau and F-max for mixed analog/digital applications

Authors
Betser, Y Scott, D Mensa, D Jaganathan, S Mathew, T Rodwell, MJ
Citation
Y. Betser et al., InAlAs/InGaAs HBTs with simultaneously high values of F-tau and F-max for mixed analog/digital applications, IEEE ELEC D, 22(2), 2001, pp. 56-58
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
22
Issue
2
Year of publication
2001
Pages
56 - 58
Database
ISI
SICI code
0741-3106(200102)22:2<56:IHWSHV>2.0.ZU;2-D
Abstract
We report the design, fabrication, and measurement of InAlAs/InGaAs heteros tructure bipolar transistors (HBTs) designed for high speed digital circuit s. At 0.96 V V-CE the current gain cutoff frequency, f(tau), is 300 GHz and the maximum frequency of oscillation, f(max), is 235 GHz, This value of f( tau) is the highest reported for bipolar transistors. At a slightly higher V-CE bias, a high value of 295 GHz for f(tau) and f(max) were obtained simu ltaneously.