Highly stained InGaP/In0.33Ga0.67As pseudomorphic high electron mobility tr
ansistor (p-HEMT) structures were grown on patterned GaAs substrates. Perfo
rmance of the highly strained p-HEMTs grown on patterned substrates was com
pared with that of highly strained p-HEMTs and conventional InGaP/In0.22Ga0
.78As p-HEMTs grown on nonpatterned substrates. The highly strained p-HEMTs
grown on patterned substrates showed substantial improvements in de (trans
conductance and drain saturation current) and rf (cutoff frequency: f(T) an
d maximum oscillation frequency: f(max)) performances as compared with thos
e of the p-HEMTs grown on nonpatterned substrates. The results indicate the
potential of highly strained p-HEMTs using reduced area growth for high-sp
eed device applications.