Highly strained InGaP/InGaAs p-HEMT using reduced area growth

Highly stained InGaP/In0.33Ga0.67As pseudomorphic high electron mobility tr ansistor (p-HEMT) structures were grown on patterned GaAs substrates. Perfo rmance of the highly strained p-HEMTs grown on patterned substrates was com pared with that of highly strained p-HEMTs and conventional InGaP/In0.22Ga0 .78As p-HEMTs grown on nonpatterned substrates. The highly strained p-HEMTs grown on patterned substrates showed substantial improvements in de (trans conductance and drain saturation current) and rf (cutoff frequency: f(T) an d maximum oscillation frequency: f(max)) performances as compared with thos e of the p-HEMTs grown on nonpatterned substrates. The results indicate the potential of highly strained p-HEMTs using reduced area growth for high-sp eed device applications.