Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction

This paper investigates anomalous diffusion behavior for ultra low energy i mplants in the extension or tip of PMOS devices. Transient enhanced diffusi on (TED) is minimal at these low energies, since excess interstitials are v ery close to the surface, Instead, interface induced uphill diffusion is fo und, for the first time, to dominate during low temperature thermal cycles. The interface pile-up dynamics can be taken advantage of to produce shallo wer junctions and improve short channel effect control in PMOS devices, Att empts to minimize TED before spacer deposition by inclusion of extra RTA. a nneals are shown to be detrimental to forming boron ultra shallow junctions .