High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment

Authors
Pan, TM Lei, TF Yang, WL Cheng, CM Chao, TS
Citation
Tm. Pan et al., High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment, IEEE ELEC D, 22(2), 2001, pp. 68-70
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
22
Issue
2
Year of publication
2001
Pages
68 - 70
Database
ISI
SICI code
0741-3106(200102)22:2<68:HQIGBN>2.0.ZU;2-P
Abstract
In this letter, a method to grow high quality interpolysilicon-oxynitride ( interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with add itional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) wi th RTA NaO oxidation, show excellent electrical properties in terms of very high electric breakdown field, ion; leakage current, high charge to breakd own, and low electron trapping rate. This novel film is a good candidate fo r an interpoly dielectric of future high density EEPROM and flash memory de vices.