High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates

High-performance CMOS circuits are fabricated from escimer-laser-annealed p oly-Si TFTs on a glass substrate (300 X 300 mill). The propagation delay ti me of the 121-stage CMOS ring oscillators with 0.5 mum gate length is 0.18 nsec at 5 V supply voltage. The maximum operating frequency of the 40-stage shift registers with 1 mum gate length is 133 MH2 at 5 V supply voltage. T his value is high enough for peripheral CMOS circuits with line-at-a-time a ddressing.