Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1,2-W continuous-wave operation at 735 nm

Authors
Sumpf, B Beister, G Erbert, G Fricke, J Knauer, A Pittroff, W Ressel, P Sebastian, J Wenzel, H Trankle, G
Citation
B. Sumpf et al., Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1,2-W continuous-wave operation at 735 nm, IEEE PHOTON, 13(1), 2001, pp. 7-9
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
13
Issue
1
Year of publication
2001
Pages
7 - 9
Database
ISI
SICI code
1041-1135(200101)13:1<7:TGLDFR>2.0.ZU;2-6
Abstract
Tensile-strained GaAsP quantum wells embedded in AlGaAs large optical cavit y structure were investigated at an emission wavelength of 735 nm, 1.2-W co ntinuous-wave operation for 100-mum stripe width diode lasers over 1000 h i s reported. Experiments with different stripe widths showed a high stabilit y at an output power of 12-mW/mum stripe widths with degradation rates belo w 5 10(-5) h(-1), i.e., lifetimes larger than 5000 h could be expected.