Resonant-cavity light-emitting diodes operating at 655 nm with a high external quantum efficiency and light power

Authors
Saarinen, M Vilokkinen, V Dumitrescu, M Pessa, M
Citation
M. Saarinen et al., Resonant-cavity light-emitting diodes operating at 655 nm with a high external quantum efficiency and light power, IEEE PHOTON, 13(1), 2001, pp. 10-12
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
13
Issue
1
Year of publication
2001
Pages
10 - 12
Database
ISI
SICI code
1041-1135(200101)13:1<10:RLDOA6>2.0.ZU;2-K
Abstract
Monolithic resonant cavity light-emitting diodes exhibiting an external qua ntum efficiency (eta (ex)) up to 6.5% for 84-mum size devices at a waveleng th of 655 nm have been demonstrated. Larger diodes, 150-300 mum in diameter , have the maximum eta (ex) between 5.5% and 4.9% and launch power output u p to 8 mW.