Nonlinear electronic transport and device performance of HEMTs

Authors
Quay, R Hess, K Reuter, R Schlechtweg, M Grave, T Palankovski, V Selberherr, S
Citation
R. Quay et al., Nonlinear electronic transport and device performance of HEMTs, IEEE DEVICE, 48(2), 2001, pp. 210-217
Citations number
31
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
2
Year of publication
2001
Pages
210 - 217
Database
ISI
SICI code
0018-9383(200102)48:2<210:NETADP>2.0.ZU;2-T
Abstract
xWe assess the impact of nonlinear electronic transport and, in particular, of real space transfer (RST) on device performance for advanced III/V high electron mobility transistors (HEMTs) using the device simulator MINIMOS-N T. In this context, we discuss de and RF performance issues for pseudomorph ic AlGaAs/InGaAs/GaAs HEMTs that are especially relevant for gate-lengths o f about 150 nm, All results are compared to and found to he consistent with experimental data for devices processed in two different foundries.