ENHANCED PHOTOLUMINESCENCE FROM INP DEPOSITED AND TREATED BY REMOTE PLASMA PROCESSES

Authors
CAPOZZI V TROVATO T LORUSSO GF PERNA G LOSURDO M CAPEZZUTO P BRUNO G
Citation
V. Capozzi et al., ENHANCED PHOTOLUMINESCENCE FROM INP DEPOSITED AND TREATED BY REMOTE PLASMA PROCESSES, Journal of luminescence, 72-4, 1997, pp. 98-100
Citations number
5
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
72-4
Year of publication
1997
Pages
98 - 100
Database
ISI
SICI code
0022-2313(1997)72-4:<98:EPFIDA>2.0.ZU;2-I
Abstract
Photoluminescence (PL) spectra of InP epilayers grown and treated by p lasma assisted MOCVD processes are presented. Defect passivation by hy drogen and microclustering are the main plasma related phenomena.