We describe an implementation of the density-gradient device equations whic
h is simple and works in any dimension without imposing additional requirem
ents on the mesh compared to classical simulations. It is therefore applica
ble to real-world device simulation with complex geometries. We use our imp
lementation to determine the quantum mechanical effects for a MOS-diode, a
MOSFET and a double-gated SOI MOSFET. The results are compared to those obt
ained by a 1D-Schrodinger-Poisson solver. We also investigate a simplified
variant of the density-gradient term and show that, while it can reproduce
terminal characteristics, it does not give the correct density distribution
inside the device.