A model of the stress induced leakage current in gate oxides

A new quantitative model of the stress induced leakage current (SILC) in MO S capacitors with thin oxide layers has been developed by assuming the inel astic trap-assisted tunneling as the conduction mechanism. The oxide band s tructure has been simplified by replacing the trapezoidal barrier with two rectangular barriers. An excellent agreement between simulations and experi ments has been found by adopting a trap distribution Gaussian in space and in energy. Only minor variations pf the trap distribution parameters were o bserved by increasing the injected charge during electrical stress, indicat ing that oxide neutral defects with similar characteristics are generated a t any stage of the stress.