Two-dimensional simulation of ferroelectric memory cells

An approach to increase the capabilities of integrated circuit nonvolatile memory is to take advantage of the hysteresis in the polarization of ferroe lectric materials. For a rigorous analysis of the resulting devices, a suit able model for the ferroelectric effects has been developed. We present thi s model and show the results of its implementation into a device simulator. Although this model was designed especially for analysis of ferroelectric materials, it is also applicable to magnetic hysteresis phenomena.