Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET

A gate-channel capacitance minimum occurs in the capacitance-voltage (C-V) curve of a fully-depleted SOI MOSFET, when the front silicon surface is bia sed into accumulation while the back surface is maintained in strong invers ion. This observation is explained in terms of a model based on the depleti on width of the silicon film, taking into account the small accumulation an d inversion layer thickness. A simple method is proposed to determine the f lat-band potential in the SOI MOSFET.