FEMTOSECOND TIME-RESOLVED PHOTOELECTRON-SPECTROSCOPY OF ANNEALED AND SPUTTERED GAP(110)

Citation
M. Leblans et al., FEMTOSECOND TIME-RESOLVED PHOTOELECTRON-SPECTROSCOPY OF ANNEALED AND SPUTTERED GAP(110), Journal of luminescence, 72-4, 1997, pp. 108-109
Citations number
2
Categorie Soggetti
Optics
Journal title
ISSN journal
00222313
Volume
72-4
Year of publication
1997
Pages
108 - 109
Database
ISI
SICI code
0022-2313(1997)72-4:<108:FTPOAA>2.0.ZU;2-E
Abstract
The relaxation of photoexcited electrons and holes at surfaces of GaP( 110) was studied by means of two- and three-photon photoelectron emiss ion under 3.16 eV photon excitation. With 200 fs time resolution, only the relaxation of surface states within the bulk band gap could be re solved occurring with time constants of 0.3 and 2.5 ps.