M. Leblans et al., FEMTOSECOND TIME-RESOLVED PHOTOELECTRON-SPECTROSCOPY OF ANNEALED AND SPUTTERED GAP(110), Journal of luminescence, 72-4, 1997, pp. 108-109
The relaxation of photoexcited electrons and holes at surfaces of GaP(
110) was studied by means of two- and three-photon photoelectron emiss
ion under 3.16 eV photon excitation. With 200 fs time resolution, only
the relaxation of surface states within the bulk band gap could be re
solved occurring with time constants of 0.3 and 2.5 ps.