STRESS STUDY OF 1.5-MU-M EMISSION IN SI-ER AND GAAS-ER

Erbium implantation into Si and GaAs introduces a set of sharp emissio n lines with a maximum of intensity at similar to 154 um. These lines are commonly attributed to the internal transitions between the crysta l field split spin-orbit levels I-4(13/2)-->I-4(15/2). This photolumin escence (PL) is persistent even at high temperatures. Codoping with ox ygen greatly enhances the intensity of this luminescence lines (up to 5-fold). In this work we show that these lines show no apreciable spli tting, shifting or broadening under uniaxial stress up to applied stre ss in the order of 200 MPa.