Effective high-frequency spectrum usage requires high-performance biters to
have a sharp cutoff frequency and high stopband attenuation. Stepped-imped
ance low-pass designs achieve this function best with large ratios of high-
to-low-impedance values. In high-index materials, such as Si (11.7) and GaA
s (12.9), however, these high-to-low-impedance ratios are around five, ther
eby significantly limiting optimum filter performance. This paper character
izes the use of Si micromachining for the development of synthesized substr
ates, which, when utilized appropriately, can further reduce the low-impeda
nce value or increase the high-impedance value. Both designs have demonstra
ted high-to-low-impedance ratios that are 1.5-2 times larger than conventio
nal techniques.