Laser probing of bipolar amplification in 0.25-mu m MOS/SOI transistors

The parasitic bipolar amplification in MOS/SOI transistors determines the S EU sensitivity of actual devices. This response is experimentally measured in a set of single transistors using a focused picosecond laser with submic rometer spatial resolution. This technique, validated by comparing the SEU behavior of registers irradiated with both laser and heavy ions, is relevan t for both device physics and hardness assurance applications.