Defects and nanocrystals generated by Si implantation into a-SiO2

Authors
Nicklaw, CJ Pagey, MP Pantelides, ST Fleetwood, DM Schrimpf, RD Galloway, KF Wittig, JE Howard, BM Taw, E McNeil, WH Conley, JF
Citation
Cj. Nicklaw et al., Defects and nanocrystals generated by Si implantation into a-SiO2, IEEE NUCL S, 47(6), 2000, pp. 2269-2275
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
6
Year of publication
2000
Part
3
Pages
2269 - 2275
Database
ISI
SICI code
0018-9499(200012)47:6<2269:DANGBS>2.0.ZU;2-U
Abstract
Electrical charge-trapping characteristics have been studied in thermal oxi des that were implanted,vith Si, experimentally using electron spin resonan ce (ESR), capacitance versus voltage (CV) measurements, transmission electr on microscopy (TEM), atomic force microscopy (AFM), and theoretically with Density Functional Theory (DFT) using plane waves. Our study examines possi ble defect structures associated with excess Si in thermal oxides.