Total dose effects in composite nitride-oxide films

Authors
Lee, SC Raparla, A Li, YF Gasiot, G Schrimpf, RD Fleetwood, DM Galloway, KF Featherby, M Johnson, D
Citation
Sc. Lee et al., Total dose effects in composite nitride-oxide films, IEEE NUCL S, 47(6), 2000, pp. 2297-2304
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
6
Year of publication
2000
Part
3
Pages
2297 - 2304
Database
ISI
SICI code
0018-9499(200012)47:6<2297:TDEICN>2.0.ZU;2-F
Abstract
Total dose effects in composite nitride-oxide (NO) films with nitride thick nesses from 58 mm to 183 mn and oxide thicknesses from 5 nm to 30 nm are st udied. A model is proposed in order to relate the threshold-voltage shift t o the NO thickness combinations. It is found that the electron-hole pairs g enerated in the bulk of the nitride do not contribute significantly to shif ting the threshold-voltage. The NO films with 10 nm oxide show smaller thre shold-voltage shift than composite films with any other oxide thicknesses.