Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs

Authors
Saigne, F Fesquet, J Gasiot, J Ecoffet, R Schrimpf, RD Galloway, KF
Citation
F. Saigne et al., Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs, IEEE NUCL S, 47(6), 2000, pp. 2329-2333
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
6
Year of publication
2000
Part
3
Pages
2329 - 2333
Database
ISI
SICI code
0018-9499(200012)47:6<2329:EPTPTC>2.0.ZU;2-T
Abstract
In this paper, a procedure is proposed to predict the long-term behavior of commercial metal oxide semiconductor field effect transistors not only aft er irradiation, as previously published, but during irradiation at a given temperature. This procedure is validated on three different commercial powe r MOSFETs, In all three cases, the predicted and experimental results are i n good agreement. The application of the procedure is discussed.