Radiation-hard ASIC design is enabled by the trend in commercial microelect
ronics toward increased radiation hardness, demonstrated here with new radi
ation results on a 0.25-mum commercial process utilizing shallow trench iso
lation. A design comparison is made between creating ASICs targeting a trad
itional rad-hard foundry, which may be more than two generations behind com
mercial foundries, applying hardness-by-design methodology at a commercial
foundry, and directly targeting a commercial foundry using commercial desig
n practices.